Internship in the field of IC design of a Charge Sensitive Amplifier for Silicon Radiation Detectors
Fondazione Bruno Kessler
Trento
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Azienda: Fondazione Bruno Kessler Trento
The Foundation operates in a plurality of disciplinary fields and aims to achieve excellence in science and technology through 2 science clusters, one dedicated to technology and innovation and one to humanities and social sciences, organized in 12 Research Centers, and with more than 450 researchers.
For more information visit . In this context, the Integrated Readout ASI Cs and Image Sensors (IRIS) Research Unit of the Center for Sensors and Devices (SD) deals with the design of integrated circuits in CMOS technology for imaging and other sensing applications, consistent with the Foundation's objectives.
More information about the IRIS Research Unit can be found at . Planned activities The IRIS Research Unit of the SD- Center is looking for a young recent graduate interested in pursuing an internship experience in the study and design of a Charge Sensitive Amplifier for Silicon Radiation Detectors.
The ideal candidate is a proactive and dynamic young person with good organizational and interpersonal skills, with a propensity for teamwork, motivated to undertake a training experience in an international context. The intern, working alongside the Research Unit staff, will mainly design an important component of an integrated circuit implementing the readout of silicon radiation detectors.
The activity covers the following activities: Study the operating principle of the device to be controlled and readout and the related work.
Develop the architecture of the amplifier and analyze its behavior, especially in terms of SNR, bandwidth and power consumption.
Design the circuit schematics and simulate it, analyzing its main performance figures, using Cadence Virtuoso CAD tool.
Optimize the design.
Design the layout of the architecture using Cadence Virtuoso CAD tools. The opportunity to join the team in other active and dynamic projects and to gain experience in a dynamic and challenging environment such as FBK will also be offered during the internship period. Requirements B.
Sc. or M.
Sc. degree in in Electrical/ Industrial/ Telecommunication Engineering, Physics (or similar).
Knowledge of major subjects related to electronics, computer science.
Fluent knowledge of written and spoken Italian and English (min. level B2).
Relational and teamwork skills.
Good adaptability, flexibility and initiative skills.
Basic knowledge of integrated circuit design. Internship information Internship start date: from may 2024 Internship experience duration: 6 months for extra-curricular internships .
Opportunity reserved for thesis students and graduates with a Master's degree (for extra-curricular internships, the degree must not have been obtained more than 12 months ago).
The internship experience will take place at the Science and Technology Cluster at the Povo location.
We offer support in finding accommodation at affiliated facilities, in the case of off-site candidates.
We offer the possibility to use the internal canteen service.
Possible recognition of participation allowance. How to Apply All interested parties are asked to fill out the online form by clicking on " Apply Online" in the " Internship opportunities" section, attaching the following documents in . pdf format: curriculum vitae motivational letter For any details about the internship activity, please contact: Massimo Gandola (mgandola@fbk. eu)
✔ Fondazione Bruno Kessler